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TOSHIBA ANNOUNCES 0.13 MICRON 1GB MONOLITHIC NAND
Demonstrating its leadership in the development of flash memory, Toshiba America Electronic Components Inc, with its parent company Toshiba Corporation (Toshiba), has announced the expansion of its line-up of high-capacity NAND with the availability of a single-die 1 gigabit (Gb) NAND electrically erasable programmable read-only memory (EEPROM). The new device, jointly developed by Toshiba and SanDisk Corporation, offers the highest capacity monolithic, binary NAND flash die currently available and was fabricated using Toshiba's advanced 0.13 micron process technology. Designated TC58NVG0S3AFT, it is the latest addition to Toshiba's flash memory line-up, currently the broadest offering of flash memory devices in the industry.
The new 1Gb monolithic NAND features a large page size of 2 kilobytes (KB) for increased program performance and a large block size of 128KB for increased erase performance in applications requiring high-performance embedded memory at an attractive cost per bit. Due to its larger page size and write cache, the TC58NVG0S3AFT is capable of programming four times the amount of data as previous devices within the same programming time per page.
Developed for use in embedded applications and for file storage, the new device is ideal for applications requiring industrial-grade data storage. Potential future applications include PDAs, digital video cameras, solid-state drives, MP3 and other emerging applications.
"Toshiba is focused on continuing our leadership by providing the highest performance flash memory to our customers," said Brian Kumagai, manager of business development for NAND flash memory products at TAEC. "As testament to our commitment to the high-capacity storage and embedded market, Toshiba now offers a new monolithic 1Gb binary NAND with the faster access times and larger block size required to meet the unique demands of these applications. Toshiba will continue to develop advanced flash memory solutions."
High performance write/erase capability is especially critical for certain multimedia applications that require fast and smooth recording of digital picture and video files.
1Gb Line-Up Offers an Array of High-Performance Flash Memory Options
Dedicated to providing a variety of cost/performance options to its customers, Toshiba offers the broadest 1Gb line-up currently on the market to meet the market's file storage needs, including fast programming, erasing and serial read. In September 2000, Toshiba debuted its 1Gb NAND line-up with a small block size version, which stacked two 512Mb chips. The company's multi-level cell (MLC) NAND flash device, announced in November 2001, provides optimal data storage at a low cost by allowing two bits of data to be stored in one memory cell, making it ideal for use in flash memory cards and for consumer applications. Today's introduction of Toshiba's new 1Gb monolithic, binary NAND flash device featuring a larger page and block size enables the faster write/erase speeds necessary for many data storage applications.
Toshiba's Broad Line-Up of NAND Flash Devices
The TC58NVG0S3AFT complements Toshiba's existing line-up of NAND flash memories, including an array of devices available in Thin Small Outline Package (TSOP), ranging in densities from 64-Megabit (Mb) to 2-Gigabit (Gb). Toshiba's small-form factor storage solutions optimized for general solid, image file and audio storage include CompactFlash, Smart Media, SD Card and ATA Card devices. For industrial use, Toshiba's NAND Flash Drive, announced in 2001, offers 2GB storage capacity compatible with hard disk drives.
The TC58NVG0S3AFT is a 3.3 volt (V) NAND EEPROM organized as (2048 + 64) bytes x 64 pages x 1024 blocks. The device has two 2 kilobyte (KB) static registers (one of which is a cache), which allow program and read data to be transferred between the register and memory cell array in 2KB increments. The device utilizes the I/O pins for both address and data input and output, as well as for command inputs. Its erase and program operations are automatically executed, making this device most suitable for systems requiring high-density non-volatile memory data storage.
Pricing and Availability
Samples of the TC58NVG0S3AFT are available now, priced at $60 each. Full production is scheduled for the fourth quarter of 2002. Toshiba's 1Gb NAND devices will be produced at the company's advanced manufacturing facility at Yokkaichi, Japan.
NAND Flash Background
Toshiba is a recognized pioneer in flash technology. Toshiba invented NAND flash technology in 1989. NAND flash is becoming one of the leading technologies for solid state storage applications because of its high-speed programming capability, high-speed erasing and low cost. The sequential nature (serial access) of NAND-based flash memory provides notable advantages for these block-oriented data storage applications. Toshiba's NAND flash memory products are optimized for general solid state storage, image file storage and audio for applications such as solid state disk drives, digital cameras, audio appliances, set-top boxes and industrial storage. This newly announced device rounds out the company's current solutions, with densities including 64Mb, 128Mb, 256Mb, 512Mb and 1Gb.
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes semiconductors, flash memory-based storage solutions, optical communication devices, displays and rechargeable batteries for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America Inc, a subsidiary of Toshiba, the second largest semiconductor company worldwide in terms of global sales for the year 2001 according to Gartner Dataquest's Worldwide Semiconductor Market Share Ranking. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's Website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com .
For further information, please contact Michelle Schneider of Toshiba America Electronic Components Inc, 949-455-2344, email@example.com iba.com.