Features - Storage Innovations:

SST INTRODUCES FAST 32 Mbit FLASH DEVICE

SST (Silicon Storage Technology Inc), a leader in flash memory technology, has introduced the SST39VF320, the 32 Mbit extension of its successful Multi-Purpose Flash (MPF) product family. The SST39VF320 is based on SST's 0.18-micron self-aligned SuperFlash process technology. Leveraging the inherent performance benefits of the SuperFlash technology, the 0.18-micron SST39VF320 MPF product boasts typical chip erase performance of 1,000 times faster than competing 32 Mbit flash alternatives. In addition, the SST39VF320 offers the industry's smallest TFBGA package (6mm x 8mm) for 32 Mbit NOR flash.

"By allowing customers to update their code and data much faster, whether during the manufacturing stage or in-system, the SST39VF320 offers a performance leap over the conventional flash devices and can also be a cost-effective alternative for multi-bank flash devices," said Jason Feinsmith, business director, Standard Memory Product Group at SST. "In addition, we paired up the SST39VF320 device with our 6mm x 8mm TFBGA package to offer the ideal performance and smallest form factor for portable applications."

With chip erase times 1,000 times faster than conventional flash, SST's customers can erase their flash devices during manufacturing in 40 milliseconds instead of the one or more minutes typical with most flash alternatives. This can save customers time and money, and remove bottlenecks in manufacturing. As for in-system programming, individual sectors can be erased 50 to 100 times faster than conventional flash, thereby reducing power consumption and providing a better end user experience.

The SST39VF320 is ideal for applications such as digital cameras, DVD players, DVD recorders, PDAs, MP3 players, digital TVs, printers, DSL equipments and networking devices.

The new 32 Mbit SST39VF320 represents the first device in SST's 0.18-micron self-aligned SuperFlash technology platform. SST's self-aligned memory cell is novel in the flash industry and achieves a smaller cell size than in previous SST technologies. SST is simultaneously bringing up three leading foundries, TSMC, Samsung, and Vanguard, to support its 0.18-micron self-aligned SuperFlash technology.

"The combination of self-aligned memory cell and 0.18-micron technology brings unprecedented density scalability to our SuperFlash technology," said Bing Yeh, CEO of SST. "These breakthroughs set the stage for SST to expand into higher density products in the near future, while SST also maintains its industry leadership position and firm commitment to the lower density flash business."

The 0.18-micron self-aligned SuperFlash technology brings all the benefits, such as superior reliability, low power operation, small sector size, fast erase time and logic compatibility to a smaller process geometry, enabling SST to bring forth high quality products such as the 32 Mbit MPF product.

Pricing and Availability

SST has been sampling the SST39VF320 since Q4 2002. Production is planned for early Q3 2003. Pricing is $4.55 in 10K unit quantities.

Key Features of the SST39VF320 32 Mbit Self-Aligned MPF Product

• Single voltage read and write operations: 2.7-3.6V
• Low power consumption: active current 9 mA (typical) and standby current 3 µA (typical)
• Fast programming: 7 µs per Word (typical)
• Fast erase times: 18 ms per 2 KWord Sector (typical); 18 ms per 32 KWord Block (typical); and 50 ms per chip (max)
• Fast read access time: 70 and 90 ns
• Small uniform sector size: 4 Kbytes per sector
• Data retention quality: 100 years data retention
• CMOS I/O compatibility
• JEDEC standard command sets and pinouts

Available in two packages: 48-lead TSOP (12mm x 20mm) and 48-ball TFBGA (6mm x 8mm x 1.1mm)

About SuperFlash Technology

SST's SuperFlash technology is a NOR type, split-gate cell architecture which uses a reliable thick-oxide process with fewer manufacturing steps resulting in a low-cost, nonvolatile memory solution with excellent data retention and higher reliability. The split-gate NOR SuperFlash architecture facilitates a simple and flexible design suitable for high performance, high reliability, small or medium sector size, in- or off-system programming and a variety of densities, all in a single CMOS-compatible technology.

About Silicon Storage Technology Inc

Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of nonvolatile memory solutions, based on proprietary, patented SuperFlash technology, for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. SST's product families include various densities of high functionality flash memory components, flash mass storage products and flash microcontrollers. SST also offers its SuperFlash technology for embedded applications through its world-class manufacturing partners and technology licensees including Grace Semiconductor Manufacturing Corporation (GSMC), IBM, Motorola, National Semiconductor, NEC Corporation, Oki Electric Industry Co Ltd, Samsung Electronics Co Ltd, SANYO Electric Co Ltd, Seiko Epson Corp, Shanghai Hua Hong NEC Electronics Co Ltd, Taiwan Semiconductor Manufacturing Co Ltd (TSMC), and Winbond Electronics Corp. TSMC offers embedded SuperFlash under its trademark Emb-FLASH. Further information on SST can be found on the company's Web site at www.sst.com.

Contact: Scott Foster, Silicon Storage Technology Inc, 408-523-7739, sfoster@sst.com.