Features - Storage Innovations:

HYNIX RELEASES 1ST COMMERCIALLY APPLICABLE MEGA-LEVEL FeRAM

Hynix Semiconductor Inc has announced the successful introduction of its commercially applicable FeRAM (Ferroelectric RAM), a non-volatile, low power, high-density and high speed memory ideal for next-generation mobile and SoC (System on Chip) applications.

Introduced in 4Mb and 8 Mb densities and manufactured on Hynix's advanced .25um process technology, the FeRAM samples operate at 3.0-Volts with data access time of 70 nanoseconds and are capable of 100 billion read/write repetitions.

Unlike existing products that are composed of two transistors and two capacitors, FeRAM achieves mega-level density by adopting a one transistor, one capacitor (1T1C) cell structure and can operate on lower than 1.0-Volt, exceeding traditional FeRAM's limitations.

In addition, by applying new circuit concepts and ferroelectric materials BLT (Bismuth Lanthanum Titanate), Hynix has dramatically improved FeRAM's stability and device reliability while shrinking its die size.

Using the newly developed technology, FeRAM is expandable to 64Mb without additional development costs. Hynix expects FeRAM to be the main memory product in embedded applications.

The 4 and 8 mega FeRAM opens the door to higher performing 64 mega-level products which Hynix plans to develop and mass produce. Hynix plans to firmly establish its presence in the future FeRAM market.

Hynix has applied for more than 150 US patents for FeRAM Technologies. The company expects rapid market penetration of FeRAM in mobile and multimedia applications including handsets, PDA's, smart phones and smart cards and projects the FeRAM market to reach 10 billion dollar scale by 2006.

Hynix will present the details of its FeRAM technical features at the 15th ISIF (International Symposium on Integrated Ferroelectrics) Conference being held in Colorado Springs, Colorado, on March 10th.

About Hynix Semiconductor Inc

Hynix Semiconductor Inc (HSI) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of high-quality semiconductors, including DRAM, SRAM, Flash memory and system IC devices. Hynix Semiconductor is the world's leading DRAM supplier with thirteen semiconductor-manufacturing facilities worldwide, and production capacity of over 300,000 wafer starts per month. In addition, Hynix is expanding its system IC business unit with leading technology and added deep sub-micron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. Hynix maintains worldwide development, manufacturing, sales and marketing facilities.

Contact: Seong Min Chung, Hynix Semiconductor Inc, +822-3459-5355 (Korea), Fax: +822-3459-5333, E-mail: seongmin.chung@hynix.com.